北京汇德信科技有限公司

纳米压印模板及光栅点阵制作

概   述标准模板一标准模板二

标准模板三

NEW

薄膜软模板 四英寸模板 六英寸模板

概述


在科研中,很多用户需要用到光栅或点阵这些周期性的结构。有时用户不需要研究微纳米加工工艺,这样如果能花费低廉的价格买到这些成品将十分方便,只要接着从事后续的工作就可以了;有的用户自已拥有微纳米加工设备及经验,但纳米量级的尺寸要采用电子束曝光 可制备百纳米周期结构的紫外曝光、白光干涉等方法来进行加工,比如采用电子束曝光加工纳米级结构,若有效面积超过1平方厘米,占机时间会很长,并需要调整电子束光刻及干法刻蚀工艺来优化成品。


鉴于此,我们向用户提供光栅及点阵的纳米结构成品。衬底材料为硅单晶,可广泛应用于各类科学研究。







标准模板一


我们可提供纳米级微结构,衬底材料为硅单晶,广泛应用于科学研究。批量生产,质量有保证,且性价比高。


产品精度:


  • 线宽/深度:±15%
  • 周期精度:优于0.5%
  • 衬底宽度和高度误差:± 0.2 mm
  • 衬底厚度:0.675 ± 0.050 mm


具体规格如下表所示:


光栅纳米结构模板 (线条+间距) Linear Nanostamps (line+space)


序号 周期
沟槽深度
占空比
线宽
样片尺寸
1
139 nm
50 nm
50%
69.5 nm
12.5×12.5×0.7 mm
2
139 nm
50 nm
50%
69.5 nm
25×25×0.7 mm
3
278 nm④
110 nm
50%
139 nm
12.5×12.5×0.7 mm
4
416.6 nm
110 nm
50%
208 nm
12.5×12.5×0.7 mm
5
500 nm
multiple
44%
220 nm
8×8.3×0.7 mm
6
500 nm
multiple
60%
300 nm
8×8.3×0.7 mm
7
555.5 nm
110 nm
50%
278 nm
20×9×0.7 mm
8
555.5 nm
140 nm
50%
278 nm
20×9×0.7 mm
9
555.5 nm
110 nm
29%
158 nm
20×9×0.7 mm
10
555.5 nm
140 nm
29%
158 nm
20×9×0.7 mm
11
600 nm
multiple
43%
260 nm
8×8.3×0.7 mm
12
600 nm
multiple
55%
330 nm
8×8.3×0.7 mm
13
606 nm
190 nm
50%
303 nm
29×12×0.7 mm
14
606 nm④
190 nm
50%
303 nm
29×12×0.7 mm
15
606 nm
190 nm
50%
303 nm
29×24.2×0.7 mm
16
675 nm
170 nm
32%
218 nm
24×10×0.7 mm
17
675 nm
170 nm
32%
218 nm
24×30.4×0.7 mm
18
700 nm
multiple
47%
330 nm
8×8.3×0.7 mm
19
700 nm
multiple
55%
375 nm
8×8.3×0.7 mm
20
833.3 nm
200 nm
50%
416 nm
12.5×12.5×0.7 mm
21
833.3 nm
200 nm
50%
416 nm
25×25×0.7 mm


占空比表示线宽和周期的比率。

第二个尺寸相当于沟槽的长度。

④scientific" grade offered at a discount. It has at least 80% of usable area. Up to 80/100 scratch/dig/particles and irregular substrate shape may present.

可定做更大尺寸

深度可做成150, 250 和 350 nm。


二维纳米模板(矩形或六边形)2D nanostamps (rectangular and hexagonal lattice)


序号
周期
晶格类型
沟槽深度
特征宽度
衬底尺寸
1
600 nm
rect post
multiple
195 nm
8×8.3×0.7mm
2
600 nm
rect post
multiple
275 nm
8×8.3×0.7mm
3
700 nm
rect post
multiple
260 nm
8×8.3×0.7mm
4
700 nm
rect post
multiple
350 nm
8×8.3×0.7mm
5
600 nm
hex post
multiple
165 nm
8×8.3×0.7mm
6
600 nm
hex post
multiple
240 nm
8×8.3×0.7mm
7
700 nm
hex post
multiple
220 nm
8×8.3×0.7mm
8
700 nm
hex post
multiple
290 nm
8×8.3×0.7mm
9
600 nm
hex hole
multiple
180 nm
8×8.3×0.7mm
10
700 nm
hex hole
multiple
200 nm
8×8.3×0.7mm
11
700 nm
hex hole
multiple
290 nm
8×8.3×0.7mm


深度可做成150, 250 和 350 nm


Line grating: hex post:
rect post: hex hole:


下载:标准模板一详细资料.pdf


标准模板二


我们可提供纳米级微结构,衬底材料为硅单晶,广泛应用于科学研究。批量生产,质量有保证,且性价比高。


产品精度:

  • 直径±10%
  • 线宽±10%
  • 高度/深度±15%

产品说明:

  • 硅片厚度:0.5mm(特殊情况另标注)
  • 模板尺寸:产品规格+/-0.2mm
  • 缺陷面积:<1%


具体规格如下表所示:


光栅结构(周期,线宽,高度,有效面积,衬底尺寸)


Part No Description Image
Pattern 56

Line grating

Period: 125 nm

Linewidth: 60 nm

Height: 120 nm

Area: 18 x 18 mm2

Substrate: Si 18 x 18 mm2

Pattern 35

Line arry

Period: 150 nm

Width: 75 nm

Height: 150 nm

Area: 15 x 15 mm2

Substrate: Si 15 x 15 mm2

Pattern 71
New!

Line grating

Period: 200 nm

Linewidth: 100 nm

Height: 60 nm or 90 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 2

Line grating

Period: 300 nm

Width: 170 nm

Height: 170 nm

Area: 30 x 30 mm2

Substrate: Si 30 x 30 mm2

Pattern 72
New!

Line grating

Period: 375 nm

Linewidth: 175 nm

Height: 150 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 28

Line grating

Period: 550 nm

Width: 288 nm

Height: 300 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 53

Line grating

Period: 600 nm

Linewidth: 400 nm

Height: 100 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 51

Line grating

Period: 800 nm

Linewidth: 400 nm

Height: 380 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 47

Line grating

Period: 1300 nm

Width: 750 nm

Height: 480 nm

Area: 2 inch diameter

Substrate: Si 2 inch diameter

Pattern 27

Line grating

Period: 4000 nm

Width: 2000 nm

Height: 2000 nm or 2300 nm

Area: 32 x 32 mm2

Substrate: Si 32 x 32 mm2

Pattern 68
New!

Line grating

Period: 4800 nm

Linewidth: 2200 nm

Height: 3200 nm or 2600 nm

Area: 25 x 25 mm2

Substrate: Si 20 x 20 mm2


V型光栅结构


Part No Description Image
Pattern 44

V groove line grating

Period: 10 μm

Top Linewidth: 400 nm

Height: 5 μm

Area: 20 x 20 mm2

Substrate: Ni 20 x 20 mm2

Pattern 50

Deep v-groove line grating

Period: 80 μm

Linewidth: 4 μm

Height: 7.5 μm

Area: 4 inch

Substrate: Si 4 inch


矩形和六边形柱状点阵


Part No Description Image
Pattern 54

Square pillar array

Period: 125 nm

Diameter: 54 nm

Height: 95nm

Area: 10 x 10 mm2

Substrate: Si 10 x 10 mm2

Pattern 55

Square pillar array

Period: 125 nm

Diameter: 74 nm

Height: 95nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 31

Square pillar array

Period: 150 nm

Diameter:  62 nm

Height:  135 nm

Area:  20 x 20 mm2

Substrate:  Si 20 x 20 mm2

Pattern 61

Square pillar array

Period: 150 nm

Diameter: 80 nm

Height: 110 nm

Area: 5 x 5 mm2

Substrate: Si 20 x 20 mm2

Pattern 48

Square pillar array

Period: 250 nm

Diameter: 115 nm

Height: 200 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 1

Square pillar array

Period: 300 nm

Diameter: 145 nm

Height: 170 nm

Area: 14 x 14 mm2

Substrate: Si 14 x 14 mm2

Pattern 29

Square pillar array

Period:  550 nm

Diameter: 300 nm

Height: 150 or 300 nm

Area:  20 x 20 mm2

Substrate:  Si 20 x 20 mm2

Pattern 52

Square pillar array

Period: 800 nm

Diameter: 440 nm

Height: 250 nm

Area: 20 x 20 mm2

Substrate:  Si 20 x 20 mm2

Pattern 73
New!

Hexagonal pillar array

Period: 200 nm

Diameter: 100 nm

Height: 100 nm

Area: 20 x 20 mm2

Substrate:  Si 20 x 20 mm2

Pattern 70
New!

Hexagonal pillar array

Period: 350 nm

Diameter: 130 nm

Height: 260 nm

Area: 20 x 20 mm2

Substrate:  Si 20 x 20 mm2

Pattern 67

Hexagonal pillar array

Period: 400 nm

Diameter: 140 nm

Height: 100 nm

Area: 5 x 5 mm2

Substrate:  Si 20 x 20 mm2

Pattern 3

Hexagonal pillar array

Period:  600 nm

Diameter: 300 nm

Height: 310 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 15

Hexagonal pillar array

Period: 750 nm

Diameter: 325 nm

Height:  260 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 7

Hexagonal pillar array

Period: 1000 nm

Diameter: 400 nm

Height: 280 nm

Area: 20 x 20 mm2

Substrate: Si 26 x 26 mm2

Pattern 17

Hexagonal pillar array

Period: 1010 nm

Diameter: 470 nm

Height: 750 nm

Area: 25 x 25 mm2

Substrate: Si (0.7mm) 25 x 25 mm2

Pattern 26

Hexagonal pillar array

Period: 1732 nm

Diameter: 880 nm

Height: 590 nm

Area:  20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 37

Hexagonal pillar array

Period:             3000 nm

Diameter:         1400 nm

Height:             5000 nm

Area:                20 x 20 mm2

Substrate:        Si 20 x 20 mm2
Pattern 20

Hexagonal pillar array

Period: 3000 nm

Diameter: 1800 nm

Height: 1200 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 39

Hexagonal tapered pillar array

Period:         600 nm

Diameter:     top 80 nm, bot 260 nm

Height:         160 nm

Area:         20 x 20 mm2

Substrate:    Quartz 20 x 20 mm2
Pattern 41

Square tapered pillar array

Period:         250 nm

Diameter:       136 nm

Height:         150 nm

Area:          14 x 14 mm2

Substrate:      Si 14 x 14 mm2


矩形和六边形孔阵


Part No Description Image
Pattern 69
New!

Square hole array

Period: 125 nm

Diameter: 65 nm

Height: 90 nm

Area: 20 x 20 mm2

Substrate: 20 x 20 mm2

Pattern 62

Square hole array

Period: 150 nm

Diameter: 65 nm

Height: 100 nm

Area: 5 x 5 mm2

Substrate: Si 20 x 20 mm2

Pattern 63

Square hole array

Period: 200 nm

Diameter: 70 nm

Height: 110 nm

Area: 5 x 5 mm2

Substrate: Si 20 x 20 mm2

Pattern 64

Square hole array

Period: 250 nm

Diameter: 70 nm

Height: 110 nm

Area: 5 x 5 mm2

Substrate: Si 20 x 20 mm2

Pattern 24

Square hole array

Period: 350 nm

Diameter: 225 nm

Height: 300 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 74
New!

Square hole array

Period: 200 nm

Diameter: 100 nm

Height: 100 nm

Area: 20 x 20 mm2

Substrate: 20 x 20 mm2

Pattern 30

Hexagonal hole array

Period: 345 nm

Diameter: 227 nm

Height: 200 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 32

Hexagonal hole array

Period:  500 , 1000 , 2000 nm

Diameter: 50, 100, 200 nm

Height: 110 nm

Area: 0.2 x 0.2 mm2 each (9x)

Substrate: Si 24 x 24 mm2

Pattern 4

Hexagonal hole array

Period: 600 nm

Diameter: 300 nm

Height: 50 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 16

Hexagonal hole array

Period: 750 nm

Diameter: 380 nm

Height: 420 nm

Area: 25 x 25 mm2

Substrate: Si 25 x 25 mm2

Pattern 36

Hexagonal hole array

Period:  1010 nm

Diameter: 340 or 390 nm

Height: 300 nm

Area: 15 x 15 mm2

Substrate: Si 15 x15 mm2

Pattern 18a

Hexagonal hole array

Period: 1010 nm

Diameter: 490 nm

Height: 300 nm

Area: 25 x 25 mm2

Substrate: Si (0.5mm) 25 x 25 mm2

Pattern 18b

Hexagonal hole array

Period: 1010 nm

Diameter:     350 nm

Height:          470 nm

Area:            25 x 25 mm2

Substrate:   Si (1mm) 25 x 25 mm2

Pattern 21

Hexagonal hole array

Period: 3000 nm

Diameter: 1500 nm

Height: 850 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2

Pattern 22

Hexagonal hole array

Period: 3000 nm

Diameter: 1200 nm

Height: 1500 nm

Area: 20 x 20 mm2

Substrate: Si 25 x 25 mm2

Pattern 49

Square hole array

Period: 500 nm

Diameter: 270 nm

Height: 400 nm

Area: 20 x 20 mm2

Substrate: Si 20 x 20 mm2

Pattern 57

Square hole array

Period: 16.5 µm

Width: 10 µm top, 6.5 µm bottom

Height: 8.6 µm

Area: 20 x 20 mm2

Substrate: Si 24 x 24 mm2



标准模板三 NEW


纳米及微米结构模板,其衬底材料为硅片。


注意:模板本身未做抗粘处理,如有需要,请联系销售人员。


具体规格如下表所示:


光栅结构 Linear Nanostamps


Product No. Period Linewidth Depth /Height Material Size
Pattern 100L -10 100nm 50nm 130nm Si 10mm×10mm
Pattern 100L -30 100nm 50nm 130nm Si 30mm×30mm
Pattern 140L -10 140nm 70nm 150nm Si 10mm×10mm
Pattern 2000L -10 2μm 1μm 1μm Si 10mm×10mm
Pattern 2000L -30 2μm 1μm 1μm Si 30mm×30mm


六边形柱状点阵 Pillars on Hexagonal array


Product No. Period Diameter Depth /Height Material Size
Pattern 460P -10 460nm φ230nm 200nm or 500nm Si 10mm×10mm
Pattern 460P -15 460nm φ230nm 200nm or 500nm Si 15mm×15mm
Pattern 460P -20 460nm φ230nm 200nm or 500nm Si 20mm×20mm
Pattern 460P -25 460nm φ230nm 200nm or 500nm Si 25mm×25mm
Pattern 460P -30 460nm φ230nm 200nm or 500nm Si 30mm×30mm
Pattern 460P -40 460nm φ230nm 500nm Si 40mm×40mm


六边形孔阵 Holes on Hexagonal array


Product No. Period Diameter Depth /Height Material Size
Pattern 460H -10 460nm φ230nm 200nm Si 10mm×10mm
Pattern 460H -15 460nm φ230nm 200nm Si 15mm×15mm
Pattern 460H -20 460nm φ230nm 200nm Si 20mm×20mm
Pattern 460H -30 460nm φ230nm 200nm Si 30mm×30mm
Pattern 1000H -10 1μm φ500nm 500nm Si 10mm×10mm
Pattern 1000H -30 1μm φ500nm 500nm Si 30mm×30mm


结构示例:


光栅结构
六边形柱状点阵
六边形孔阵




薄膜软模板


Product No. Pattern Pitch Width/φ Depth /Height Material Size
COP H460-120 hole 460nm、 Hexagonal Array φ230nm 200nm COP φ120mm
COP P46-1200 pillar 460nm、 Hexagonal Array φ230nm 200nm COP φ120mm
COP P1000-50 pillar 1μm、 Hexagonal Array φ500nm 500nm COP φ50mm
COP LS2000-30 Linear 2μm 1μm 1μm COP φ30mm
COP LS2000-50 Linear 2μm 1μm 2μm COP φ50mm


大面积四英寸模板


我们提供四英寸硅或石英模板,可用于压印工艺。批量生产制作,质量有保证且性价比高。


产品精度:


  • 高度/深度:±15%
  • 直径:±10%
  • 线宽:±10%
  • 缺陷面积:<1%


具体规格如下表所示:


Holes on Hexagonal Lattice(六边形孔阵)


Part No

Product

Period

Area

Diameter

Max. Etch depth (Si/Quartz)

Image

1

P200h_h_100d

200nm

φ94

mm

90-120

nm

120nm/100nm

2

P350h_h_100d

350nm

φ94

mm

120-170

nm

200nm/100nm

3

P450h_h_50d

450nm

φ50

mm

220-260

nm

350nm/150nm

4

P500h_h_100d new!

500nm

φ94

mm

250-300

nm

500nm/300nm

5

P600h_h_100d

600nm

φ94

mm

250-300

nm

450nm/200nm

6

P750h_h_51w51

750nm

51x51

mm2

250-350

nm

450nm/200nm

7

P780h_h_50d

780nm

φ50

mm

250-380

nm

450nm/200nm

8

P870_h_100d

870nm

φ94

mm

300-45

0nm

550nm/250nm

9

P1000_h_100d

1000nm

φ94

mm

300~500

nm

600nm/300nm

10

P1500h_h_51w51

1500nm

51x51

mm2

400~650

nm

600nm/300nm

11

P1700h_h_100d

1700nm

φ94

mm

500~800

nm

800nm/400nm

12

P2000h_h_100d

2000nm

φ94

mm

600~1100

nm

800nm/400nm

13

P3000h_h_100d

3000nm

φ94

mm

600~1400

nm

1000nm/400nm

14

P3450h_h_100d

3500nm

φ94

mm

800~1600

nm

1200nm/500nm

15

P5200h_h_100d

5200nm

φ94

mm

1200~2400

nm

1200nm/500nm


Holes on Square Lattice(矩形孔阵)


Part No

Product

Period

Area

Diameter

Max. Etch depth (Si/Quartz)

Image

1

P125s_h_90d

125nm

φ90mm

50~70nm

150nm/100nm

2

P140s_h_80d

140nm

Φ80mm

60~80nm

150nm/100nm

3

P150s_h_90d

150nm

φ90mm

60~90nm

150nm/100nm

4

P190s_h-100d new!

190nm

φ94mm

85~115nm

180nm/140nm

5

P200s_h_90d

200nm

φ90mm

70~120nm

200nm/150nm

6

P235s_h_100d new!

235nm

φ94mm

100~135nm

200nm/150nm

7

P300s_h_90d

300nm

φ90mm

120~180nm

200nm/150nm

8

P350s_h_100d

350nm

φ94mm

240~280nm

300nm/150nm

9

P375s_h_100d

375nm

φ94mm

150~250nm

200nm/100nm


Pillars on Hexagonal Lattice(六边形柱状点阵)


Part No

Product

Period

Area

Diameter

Max. Etch depth (Si/Quartz)

Image

1

P200h_p_100d

200nm

φ94

mm

90~120

nm

120nm/100nm

2

P450h_p_50d

450nm

φ50

mm

200~250

nm

350nm/150nm

3

P500h_p_100d new!

500nm

φ94

mm

200~250

nm

450nm/200nm

4

P600h_p_100d

600nm

φ94

mm

200~300

nm

450nm/200nm

5

P750h_p_51w51

750nm

51x51

mm2

200~350

nm

450nm/200nm

6

P780h_p_50d

780nm

φ50

mm

250~350

nm

450nm/200nm

7

P870h_p_100d

870nm

φ94

mm

300~400

nm

550nm/250nm

8

P1000h_p_100d

1000nm

φ94

mm

300~500

nm

600nm/300nm

9

P1500h_p_51w51

1500nm

51x51

mm2

400~650

nm

600nm/300nm

10

P1700h_p_100d

1700nm

φ94

mm

500~800

nm

800nm/400nm

11

P2000h_p_100d

2000nm

φ94

mm

600~1100

nm

800nm/400nm

12

P3000h_p_100d

3000nm

φ94

mm

600~1400

nm

1000nm/400nm

13

P3450h_p_100d

3500nm

φ94

mm

600~1600

nm

1200nm/500nm

14

P5200h_p_100d

5200nm

φ94

mm

600~2000

nm

1200nm/500nm


Pillars on Square Lattice(矩形柱状点阵)

Part No

Product

Period

Area

Diameter

Max. Etch depth (Si/Quartz)

Image

1

P125s_p_90d

125nm

φ90mm

50~70nm

90nm/60nm

2

P140s_p_80d

140nm

φ80mm

50~75nm

75nm/ —

3

P150s_p_90d

150nm

φ90mm

60~85nm

75nm/ —

5

P250s_p_90d

250nm

φ94mm

110~130nm

200nm/100nm

6

P280s_p_80d

280nm

Φ80mm

120~150nm

200nm/100nm

7

P300s_p_100d

300nm

φ94mm

120~160nm

200nm/100nm

8

P380s_p_100d new!

380nm

φ94mm

160~220nm

400nm/300nm

9

P400s_p_100d

400nm

φ94mm

150~220nm

300nm/100nm

10

P480s_p_100d new!

480nm

φ94mm

200~270nm

500nm/400nm

11

P500s_p_100d

500nm

φ94mm

200~250nm

400nm/150nm

12

P560s_p_80d

560nm

Φ80mm

200~280nm

400nm/150nm

13

P600s_p_100d

600nm

φ94mm

200~300nm

500nm/250nm

14

P760s_p_100d new!

760nm

φ94mm

330~430nm

700nm/600nm

15

P800s_p_100d

800nm

φ94mm

200~400nm

500nm/300nm


Linear Gratings(光栅结构)


Part No

Product

Period

Area

Width

Max. Etch depth (Si/Quartz)

Image

1

P125L-80d

125nm

φ80

mm

50~80

nm

100nm/80nm

2

P140L_ 80d

140nm

φ80

mm

50~85

nm

100nm/80nm

3

P150L_ 90d

150nm

φ90

mm

60~100

nm

75nm/80nm

4

P200L_ 90d

200nm

φ90

mm

60~120

nm

150nm/120nm

5

P250L_100d

250nm

φ94

mm

90~130

nm

200nm/100nm

6

P280L_80d

280nm

φ80

mm

100~150

nm

200nm/100nm

7

P300L_100d

300nm

φ94

mm

100~160

nm

300nm/100nm

8

P380L_100d new!

380nm

φ94

mm

200~270

nm

400nm/300nm

9

P400L_100d

400nm

φ94

mm

100~200

nm

300nm/150nm

10

P470L_100d new!

470nm

φ94

mm

200~270

nm

500nm/400nm

11

P500L_100d

500nm

φ94

mm

150~250

nm

400nm/200nm

12

P560L_80d

560nm

φ80

mm

15~280

nm

400nm/200nm

13

P600L_100d

600nm

φ94

mm

150~300

nm

500nm/250nm

14

P760L_100d new!

760nm

φ94

mm

320~430

nm

700nm/600nm

15

P800L_100d

800nm

φ94

mm

200~400

nm

600nm/300nm

16

P1000L_100d

1000nm

φ94

mm

200~500

nm

800nm/400nm

17

P1300L_75w55

1300nm

75x55

mm2

300~650

nm

1000nm/500nm


Multi-pattern(复合结构)


Part No

Product

Description

Diameter

Period

Area

Max. Etch depth (Si/Quartz)

1

MHSL400-800

Linear, hexagonal, square array combination,Periods: 400-800nm

pitch dependent

holes/
lines

9 x each period,7.5mm x 7.5mm

400 nm /150 nm

2

MP250L300

Multi-period linear grating combination 1, Periods: 250nm, 275nm, 300nm

Linewidth(+/15nm):
90/250
100/275
120/300

lines

3 x each period,7mm x 7mm

200 nm/100 nm

3

MP300L600

Multi-period linear grating combination 2,Periods: 300nm, 400nm, 500nm, 600nm

Linewidth (+/- 10%):
135/300
175/400
250/500
300/600

lines

4 x each period,10mm x 10mm

300 nm/150 nm

4

MP800L1500

Multi-period linear grating combination 3,Periods: 800nm, 1000nm, 1200nm, 1500nm

Linewidth (+/- 10%):
400/800
500/1000
600/1200
700/1500

lines

4 x each period,20mm x 20mm

1000 nm/500 nm

5

MP500L2050

Multi-period linear grating combination 3,Periods: 550nm, 600nm, 650nm……1950nm, 2000nm, 2050nm


lines

32 x 12mm x 12mm

600nm/300nm


如下是复合结构示意图:


MHSL400-800 MP250L300 MP300L600


六英寸模板


我们可提供纳米级微结构,衬底材料为硅单晶及少量其它衬底,广泛应用于科学研究。批量生产,质量有保证,且性价比高。


具体规格如下表所示:


序号 周期(nm) 类型 刻蚀深度(nm) 衬底尺寸(mm) 衬底材料
1 250 line/space Φ 150 Si
2 250 line/space 300 Si
3 275 line/space 80 Φ 150 Si
4 275 line/space Φ 150 Si
5 400 line/space Φ 150 Si
6 435 line/space 135 Φ 150 Si
7 450 line/space Φ 150 Si
8 450 line/space 450 Φ 150 Si
9 458.5 line/space 125 Φ 150 Si
10 458.5 line/space Φ 150 Si
11 500 line/space Φ 150 Si
12 500 line/space 100 Φ 150 Si
13 800 line/space Φ 150 Si
14 2500 line/space Φ 150 Si
15 2500 line/space 1000 Φ 150 Si
16 325 2d pillar Φ 150 Si
17 325 2d pillar 100 Φ 150 Si
18 400 2d pillar Φ 150 Si
19 400 2d pillar 110 Φ 150 Si
20 450 2d pillar Φ 150 Si
21 450 2d pillar 150 Φ 150 Si
22 500 2d pillar Φ 150 Si
23 500 2d pillar 100 Φ 150 Si
24 500 2d pillar 200 Φ 150 Si
25 800 2d pillar Φ 150 Si
26 1000 2d pillar Φ 150 Si
27 1000 2d pillar 400 Φ 150 Si
28 1200 2d pillar Φ 150 Si
29 2000 2d pillar Φ 150 Si
30 2000 2d pillar 133 Φ 150 Si
31 400 2d pillar 140 Φ 150 Si
32 400 2d pillar 100 SiO2 Φ 150 Si +100nm SiO2
33 500 2d pillar Φ 150 Si
34 500 2d pillar 110 Φ 150 Si
35 500 2d pillar 200 Φ 150 Si
36 600 2d pillar Φ 150 Si
37 657 2d pillar Φ 150 Si
38 657 2d pillar 300 Φ 150 Si
39 800 2d pillar Φ 150 Si
40 1000 2d pillar Φ 150 Si
41 1000 2d pillar 160 Φ 150 Si
42 400 2d pillar Φ 150 fused silica
43 500 2d conical pillar Φ 150 Si
44 800 hex 460 Φ 150 Si
45 200 hex hole 460 Φ 150 Si
46 470 hex pillar 125 Φ 150 Si
47 800 hex pillar Φ 150 Si
48 1800 hex pillar 475 Φ 150 Si


说明:


①:尚未刻蚀



Line / space

2d pillar

2d hole

hex hole

hex pillar




 

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