碲化锌单晶 ZnTe
Structure formula: | ZnTe |
Crystal structure: | cubic |
Crystal axis: | (111) |
Orientation: |
(100); (110); (111) ±30 arc minutes. Other orientations available on request. |
Production method: | Markov |
Lattice paramters, A | a = 6.1034 |
Specific resistivity, Ohm cm undoped: doped: |
1x106 -- |
Hall mobility, cm2/V/sec | 130(h) |
EPD, cm-1 | < 5x105 |
Density of low angle boundaries, cm-1 | < 10 |
Twins and stacking faults | twin free |
Orientation accuracy: | max. 1°; typ. < 0.5° |
Standard wafer sizes: |
5 mm x 5 mm, 10 mm x 10 mm and round ø 40 mm |
Max. sizes of wafers (at thickness 1 mm): |
(111) ø 40 mm (110) 35 x 15 (100) 35 x 15 |
Standard thickness: | 0.5 mm or 1 mm |
Tolerances Width/Length: Diameter: Thickness: |
± 0.050 mm + 0.000 mm / -0.100 mm ± 0.050 mm |
Polishing: |
one side or both sides polished. Optical Polishing Chemical mechanical polishing |
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