半导体单晶
Crystal | Doping | Type |
Carrier Concentr [cm-3] |
EPD [cm-2] |
Growth Technique & Diameter |
Info |
---|---|---|---|---|---|---|
GaSb 锑化镓单晶 |
None Zn Te Hi-R Hi-R |
P P+ N P N |
2x1016 1-5x1018 2-6x1017 1-5x1016 1-5x1016 |
< 103 |
CZ & LEC ø3" |
|
Ge 锗单晶 |
None Sb |
P N |
|
< 5x103 |
CZ/Br ø1" - ø4" |
|
Si 硅单晶 |
None B As P Sb |
P N N N |
|
|
CZ/FZ ø2" - ø6" |
|
CdTe 碲化镉单晶 |
None |
|
|
|
Br | 详情 |
ZnTe 碲化锌单晶 |
None |
|
|
|
Markov ø30mm |
详情 |
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